Schottky barrier photodiodes have been fabricated on p Hg1−xCdxTe (0.20<x<0.38) with aluminum and chromium as barrier metals. Various electrical characterizations have been carried out to determine barrier heights and the results are found to be in excellent agreement with Schottky thermionic emission theory. These photodiodes have also been used to determine the minority carrier lifetime and diffusion length in p Hg1−xCdxTe.
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Polla et al. (1980) studied this question.
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