A coplanar distributed amplifier, fabricated in a double channel InP HEMT technology, is presented. It exhibits a 13 dB gain and a 92 GHz −3 dB cutoff frequency that corresponds to a gain-bandwidth product of 410 GHz. Key aspects for distributed and coplanar design around 100 GHz are highlighted.
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Meliani et al. (2002) studied this question.
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