What question did this study set out to answer?

To map three-dimensional lattice strain and structural stacking defects in a single indium gallium arsenide nanowire using coherent X-ray diffraction.

January 18, 2018Nano LettersOpen Access

Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography

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Authors

MHMegan O. HillLund University ICIrene Calvo‐AlmazánInstituto de Nanociencia y Materiales de Aragón MAMarc AllainCentre National de la Recherche Scientifique

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Overview

Nanoscale imaging study demonstrates three-dimensional strain and defect mapping in a single InGaAs nanowire, indicating pathways for in operando characterization of integrated optoelectronics.

Key Points

To map three-dimensional lattice strain and structural stacking defects in a single indium gallium arsenide nanowire using coherent X-ray diffraction.
Targeted a single InGaAs nanowire on a silicon substrate using coherent nanofocused X-rays across the 21̅1̅0 and 011̅0 Bragg peaks.
Implemented multiangle Bragg projection ptychography (maBPP) to reconstruct overlapping nanodiffraction patterns across multiple angles without scan registration.
Reconstruction of the 21̅1̅0 Bragg peak demonstrated that lattice orientation shifts along the nanowire length while cross-sectional strain remains stable, avoiding perturbation of the band structure.
Reconstruction of the 011̅0 Bragg peak resolved three-dimensional stacking faults and local strains, uncovering sharp planar boundaries between wurtzite crystal phases that cause carrier scattering.

Cite This Study

Hill et al. (2018) studied this question.

synapsesocial.com/papers/6a968fa333d7b00ae7bb8850 https://doi.org/10.1021/acs.nanolett.7b04024

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January 18, 2018Nano LettersOpen Access

Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography

View Full Paper

Ask AI

Bookmark

Authors

MHMegan O. HillLund University ICIrene Calvo‐AlmazánInstituto de Nanociencia y Materiales de Aragón MAMarc AllainCentre National de la Recherche Scientifique

Discussion

Member takes

Overview

Nanoscale imaging study demonstrates three-dimensional strain and defect mapping in a single InGaAs nanowire, indicating pathways for in operando characterization of integrated optoelectronics.

Key Points

To map three-dimensional lattice strain and structural stacking defects in a single indium gallium arsenide nanowire using coherent X-ray diffraction.
Targeted a single InGaAs nanowire on a silicon substrate using coherent nanofocused X-rays across the 21̅1̅0 and 011̅0 Bragg peaks.
Implemented multiangle Bragg projection ptychography (maBPP) to reconstruct overlapping nanodiffraction patterns across multiple angles without scan registration.
Reconstruction of the 21̅1̅0 Bragg peak demonstrated that lattice orientation shifts along the nanowire length while cross-sectional strain remains stable, avoiding perturbation of the band structure.
Reconstruction of the 011̅0 Bragg peak resolved three-dimensional stacking faults and local strains, uncovering sharp planar boundaries between wurtzite crystal phases that cause carrier scattering.

Cite This Study

Hill et al. (2018) studied this question.

synapsesocial.com/papers/6a968fa333d7b00ae7bb8850 https://doi.org/10.1021/acs.nanolett.7b04024

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