The drift mobility, carrier density and conductivity of the two-dimensional electron gas (2DEG) confined in the tensilely strained 15 nm Si quantum well (QW) of SiGe heterostructures were obtained by mobility spectrum analysis at room-temperature. The highest 2DEG drift mobility of 2900 cm 2 V -1 s -1 with carrier density of 1 × 10 11 cm -2 were observed in the Si QW with -0.9% tensile strain. However, the increase of strain up to -1.08% resulted in the decline of 2DEG drift mobility down to 2670 cm 2 V -1 s -1 and the pronounced increase of carrier density up to 4.4 × 10 11 cm -2 . Nevertheless, the pronounced enhancement of 2DEG conductivity was observed.
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Myronov et al. (2008) studied this question.
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