Origin of the SiCH3 Peak Position Shift in SiOC Films

SiOC films consist of the cross-linked or cross-link breakage structures depending on the variation in the flow rate ratio between O 2 and bistrimethylsilylmethane due to the properties of the carbonyl group. As the results, SiOC films showed the sharp contrast in chemical shift, such as a blue and red shift. Generally, the Si–CH 3 bond shows very strong bond, but the position of Si–CH 3 peak in SiOC films varied depending on the bonding structure. The Si–CH 3 bond at 1250 cm -1 is due to bis(trimethylsilyl)methane gas, which does not fully dissociated by substitution reaction unimolecular. On the other hand, the Si–CH 3 bond at 1275 cm -1 originates from substitution reaction bimolecular inducing the reaction of nucleophilic attack of organometallic carbon.