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A systematic procedure for ultra‐precise lattice parameter determination using X‐ray Renninger scanning (XRS) is optimized and applied to probe the average in‐plane strain in series of samples representing the different stages of the growth process of single‐buried quantum dots (QDs). Covering InAs QDs growth on GaAs(001) substrates generates an expansive in‐plane strain that is related to the density of QDs. Rocking curves and atomic force microscopy are also used for a general qualitative analysis of the growths, as well as of the morphology and density of the QDs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Freitas et al. (2007) studied this question.
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