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We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, and diagonal and off-diagonal conductivities in finite-magnetic-field formalism. We also observed crossover of integer quantum Hall effect from two independent monolayer type systems to a strongly coupled bilayer system by changing the ratio of interlayer hopping energy and the Fermi energy. We also discuss the case of multilayer systems with Bernal stacking.
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Nakamura et al. (2008) studied this question.
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