High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO/sub 2/ tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.
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She et al. (2002) studied this question.
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