The oxidation of thin films of boron and hafnium diboride grown on a Hf(0001) single crystal surface was studied with reflection absorption infrared spectroscopy (RAIRS). For both the boron and hafnium diboride films an intense broad band near 1500 cm−1 as well as features near 750 and 1250 cm−1 were detected. These vibrational features are characteristic of solid B2O3. The formation of B2O3 is also indicated by x-ray photoelectron spectroscopy (XPS) by the appearance of a chemically shifted B(1s) peak at a binding energy of 193.1 eV. However, the sensitivity for detecting surface oxide formation is considerably higher for RAIRS than for XPS.
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Belyansky et al. (1997) studied this question.
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