A low-power IC-compatible electrostatically driven microrelay is presented. The mechanical part of the microrelay consists of a polysilicon/silicon nitride/polysilicon microbridge realized by sacrificial layer technology. Its fabrication, operation up to 100 kHz and net switching voltages in the 1 to 10 V range are reported.
No takes yet. Share an insight, caveat, or question.
Grétillat et al. (1995) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: