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December 23, 2004Journal of Applied Physics

Effects of post–deposition annealing on the material characteristics of ultrathin HfO2 films on silicon

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RPRagesh PuthenkovilakamLam Research (United States)YLY. -S. LinUniversity of California, Los AngelesJCJu Hyeon ChoiKorea Photonics Technology Institute

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Puthenkovilakam et al. (2004) studied this question.

synapsesocial.com/papers/6a96ffd72edfdb386882276ahttps://doi.org/10.1063/1.1831543
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