Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 15, 2001Journal of Applied Physics

Highly conformal ZrO2 deposition for dynamic random access memory application

View Full Paper
Ask AI
Bookmark
Share

Authors

JCJane P. ChangHarvard UniversityYLYou-Sheng LinDongguan University of Technology

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Chang et al. (2001) studied this question.

synapsesocial.com/papers/6a978b98dfe10a478e9da170https://doi.org/10.1063/1.1389756
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Nitrogen plasma annealing for low temperature Ta2O5 films1998 · 120 citations
  2. 2On the Defect Structure of ZrO[sub 2] and HfO[sub 2]1963 · 99 citations
  3. 3Effects of ion energy and arrival rate on the composition of zirconium oxide films prepared by ion-beam assisted deposition1996 · 43 citations
  4. 4Pressure dependence of the refractive index of monoclinic and yttria-stabilized cubic zirconia1995 · 31 citations
  5. 5Model studies of dielectric thin film growth: Chemical vapor deposition of SiO21990 · 54 citations