We report the characterization of a single-electron transistor based on bended wires fabricated on modulation-doped SiGe two-dimensional electron gas. Electrical measurements show a diamond-shaped stability plot and a nonperiodic sequence of conductance peaks. The device behavior suggests the presence of disorder-induced multiple islands along the wire. Conductance oscillations remain well pronounced above liquid helium temperature.
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Notargiacomo et al. (2003) studied this question.
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