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Coulomb blockade has been observed in the current-voltage characteristics of structures fabricated in silicon germanium δ-doped material at temperatures up to 50 K. This is consistent with the estimated effective tunnel capacitance of 10 aF which is significantly smaller than the reported capacitances of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.
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Paul et al. (1993) studied this question.
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