A desktop-computer-based calculation of high-frequency MOS C-V curves

A Simple desktop-computer-based technique for the calculation of theC-Vcurves of MOS capacitors is presented. The equivalent circuit model for low- and high-frequency semiconductor capacitance and, in the latter case, both with and without minority carriers, has been investigated. The computer simulation of the equivalent circuit model revealed that theC-Vcurves for both the exact high frequency and the high frequency without minority carriers are essentially the same. An analytical calculation of the low-frequencyC-Vcurve has been performed and plotted for a direct comparison with the computer simulation by the equivalent circuit model. Application of this technique will allow both high-frequency MOSC-Vmeasurements and calculated theoretical high-frequencyC-Vcurves to be displayed and plotted on the same desktop computer system(s). A complete model for each case and a detailed explanation of programming steps are also discussed.