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The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by in situ scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650<T<750 °C using reactive magnetron sputter deposition in pure N2. The surface morphology is dominated by growth mounds with an aspect ratio of ≃0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, tα, with α=0.25±0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature.
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Karr et al. (1997) studied this question.
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