Simulations of crystal growth: Effects of atomic beam energy

We have simulated silicon molecular beam epitaxy on (100) and (111) substrates using molecular dynamics methods. We find that the kinetic energy of the atomic beam has a dramatic effect on the crystalline ordering in the deposit. Energetic beams form a crystalline film at less than half the absolute temperature required for a thermal beam. Our simulations show that crystallization is facilitated by the transient atomic motion just after the impact of an atom from the beam.