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Bistable switching with memory has been achieved in various n-type GaAs Schottky contacts and n-type Si Schottky contacts doped with trap impurities. Transition from the low-conductivity state into a high-conductivity state is established after a delay of 10 nsec, when a threshold voltage is exceeded. With opposite bias direction, resetting occurs in 10 nsec by exceeding a current threshold. Either state is maintained over weeks without bias.
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A. Moser (1972) studied this question.
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