Transport equations are proposed for vapor growth of materials in closed tube process, considering diffusion and laminar flow as fundamental transport mechanisms. These equations are applied to transport reactions of GaAs and Ge, as well as impurity doping in Ge-Impurity-I2 system. Calculations are compared with the experiment by F. A. Pizzarello for GaAs-I2 system, and with the results of I. B. M. workers for Ge-I2 system. For GaAs-I2 system, the agreement is very good, but somewhat poor for Ge-I2 system.
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Arizumi et al. (1965) studied this question.
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