Equivalent Circuit Model in Grain‐Boundary Barrier Layer Capacitors

Electrical properties of BaTiO 3 ‐based capacitors are investigated. A new model is developed to explain the frequency response of the impedance of grain‐boundary barrier layer (GBBL) capacitors. This model takes into consideration the dipole polarization effect and provides a simple and effective approach to evaluate the performance of GBBL capacitors with various dopants and sintering in different atmospheres. When sintered in a reducing atmosphere, doped BaTiO 3 exhibits a higher dielectric constant and a relatively stable dieletric constant with respect to the frequency response and temperature dependence. Also, smaller grain resistivity is obtained with addition of both Dy 2 O 3 and Nb 2 O 5 .