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A device concept is proposed for modulating light in silicon-based photonic crystal devices by using highly localized high-temperature modulation of a compact device to vary the position of the cutoff frequency in a photonic crystal waveguide and modulate light. The position of the cutoff frequency can be varied by up to 60nm at the telecommunication wavelength of 1550nm by locally increasing the temperature of the device. Modulators of a few to several micrometers in width can be designed that can modulate light with extinction ratios up to 50dB and low insertion loss.
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Tinker et al. (2005) studied this question.
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