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June 15, 2001Journal of Applied Physics

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

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Authors

HMH. MarchandIQE (United Kingdom)LZLingyan ZhaoUniversity of PittsburghNZN. ZhangUniversity of California, Santa Barbara

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Marchand et al. (2001) studied this question.

synapsesocial.com/papers/6a9741c009015f5b5d30ee13https://doi.org/10.1063/1.1372160
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