Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas

We investigated the dependences of the deposition rate and residual OH content of SiO 2 films on the concentration of trichloroethylene (TCE), which was added during deposition at low temperatures of 160–260 °C with the reactant gases of silicone oil (SO) and O 3 . The deposition rate depends on the TCE concentration and is minimum at a concentration of ∼0.4 mol/m 3 at 200 °C. The result can be explained by surface and gas-phase reactions. Experimentally, we also revealed that the thickness profile is strongly affected by gas-phase reaction, in which the TCE vapor was blown directly onto the substrate surface, where it mixed with SO and O 3 . Furthermore, it was found that adding TCE vapor reduces residual OH content in the SiO 2 film deposited at 200 °C because TCE enhances the dehydration reaction.