High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN

Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1 V is achieved. Of the photons absorbed in the limited spectral range of <450 nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49 mW/cm2 to 0.51 mW/cm2 at 40 suns and then falls 0.42 mW/cm2 at 150 suns. Under external heating, a maximum of 0.59 mW/cm2 is reached at 250 °C. Even at 400 °C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.