Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes

We use rate equation simulations to model the influence of an unequal distribution of injected charge carriers in the quantum wells of GaN-based laser diodes. Therefore, the basic rate equation model is generalized to include multiple independent charge carrier reservoirs that couple to the optical cavity mode. The occurrence of a nonlinear output characteristic is found to be a direct evidence of unequal pumping, and the pumping ratio of the quantum wells can be determined from the magnitude of this nonlinearity.