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May 22, 2006Applied Physics Letters

Ultralow resistance Si-containing Ti∕Al∕Mo∕Au Ohmic contacts with large processing window for AlGaN∕GaN heterostructures

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Authors

FMFitih M. MohammedUniversity of MosulLWLiang WangShandong University of TechnologyIAI. AdesidaUniversity of Illinois Urbana-Champaign

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Mohammed et al. (2006) studied this question.

synapsesocial.com/papers/6a977d77cd57e03c5262e60ehttps://doi.org/10.1063/1.2206127
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Hall measurements and contact resistance in doped GaN/AlGaN heterostructures1996 · 89 citations
  2. 2Ultra-low resistive ohmic contacts on n-GaN using Si implantation1997 · 114 citations
  3. 3Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer2003 · 13 citations
  4. 4Improved contact performance of GaN film using Si diffusion2000 · 27 citations
  5. 5Dislocation-induced nonuniform interfacial reactions of Ti∕Al∕Mo∕Au ohmic contacts on AlGaN∕GaN heterostructure2005 · 75 citations