Static and pulsed measurements have been performed on GaN MESFETs. The existence of electrical traps associated with the surface states has been demonstrated. These traps can be activated by light or temperature. Hyper-frequency pulsed measurements performed at 3 GHz have shown that the maximum stable gain increases with temperature.
No takes yet. Share an insight, caveat, or question.
Trassaert et al. (1999) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: