PbTe single‐crystal epitaxial layers have been grown on PbTe substrates using the tipping technique. The layers were grown on {111} and {100} oriented substrates from lead‐tellurium solutions containing from 0.01 to 0.20 atomic fraction tellurium. Cooling rates of from 0.2° to 1°C/min were used. The resulting layers were characterized using x‐ray, optical, etching, and electrical techniques. Diodes were fabricated from several of the resulting materials, and their characteristics were found to be substantially improved over diffused PbTe diodes.
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Wagner et al. (1970) studied this question.
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