Static measurements of GaN MESFETs on (111) Sisubstrates

For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrate have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm was achieved on a 100 * 0.5 µm2 device. At a drain-to-source voltage of 30 V, the drain current density reaches 100 mA/mm at Vgs = 0 V.