A pulse-doped-heterostructure GaInAs MESFET having a 0.7 μm gate length with a transconductance of 270 mS/mm has been fabricated. Maximum stable gains of 14 dB at 26.5 GHZ, which extrapolates to an fmax of over 100 GHz, were measured.
No takes yet. Share an insight, caveat, or question.
Fathimulla et al. (1988) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: