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The observation and proposed mechanism for negative photoconductivity leading to the kink effect in the output DC characteristics of AlGaAs/GaAs HEMTs is reported. Negative photoconductivity is the result of trapping electrons at the surface, and the kink is attributed to the tunnelling of these trapped electrons back into the n-AlGaAs layer, at a constant gate-to-drain bias.
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Thomasian et al. (1989) studied this question.
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