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December 28, 2015Applied Physics Letters

Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing

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Authors

JZJinhan ZhangChongqing Normal UniversitySHSen HuangInstitute of MicroelectronicsQBQilong BaoWenzhou University

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Zhang et al. (2015) studied this question.

synapsesocial.com/papers/6a978b7a275b4863ba2d1e77https://doi.org/10.1063/1.4939190
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