Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 2013Applied Physics ExpressOpen Access

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

View Full Paper
Ask AI
Bookmark
Share

Authors

SAS. ArulkumaranNagoya UniversityGNGeok Ing NgAgency for Science, Technology and ResearchSVS. VickneshApplied Materials (Singapore)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Arulkumaran et al. (2013) studied this question.

synapsesocial.com/papers/6aa6323d50dab972bddd5fe8https://doi.org/10.7567/apex.6.016501
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate2005 · 120 citations
  2. 2100 nm gate AlGaN/GaN HEMTs on silicon with f T =90 GHz2009 · 32 citations
  3. 3Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si2011 · 58 citations
  4. 4InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz2012 · 340 citations
  5. 512 W/mm AlGaN–GaN HFETs on Silicon Substrates2004 · 226 citations