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August 3, 2011Applied Physics Express

Improved Power Device Figure-of-Merit (4. 0 10^8 V^2 ^-1 cm^-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

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Authors

SAS. ArulkumaranNagoya UniversitySVS. VickneshApplied Materials (Singapore)GNGeok Ing NgAgency for Science, Technology and Research

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Arulkumaran et al. (2011) studied this question.

synapsesocial.com/papers/6a611f967bdfcb316faabe0fhttps://doi.org/10.1143/apex.4.084101
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