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March 15, 2005Applied Physics Letters

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

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Authors

SAS. ArulkumaranNagoya UniversityTETakashi EgawaNagoya Institute of TechnologySMS. MatsuiTokyo Institute of Technology

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Arulkumaran et al. (2005) studied this question.

synapsesocial.com/papers/6a978fc07f1bd40ee0e3395chttps://doi.org/10.1063/1.1879091
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