Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 13, 2010Applied Physics Letters

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

View Full Paper
Ask AI
Bookmark
Share

Authors

DVDomenica VisalliImec the NetherlandsMHM. Van HoveUniversity of ExeterPSPuneet SrivastavaBAE Systems (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Visalli et al. (2010) studied this question.

synapsesocial.com/papers/6a9e3f38ef338a591ef9a031https://doi.org/10.1063/1.3488024
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures1999 · 3,020 citations
  2. 2Experimental evaluation of impact ionization coefficients in GaN1999 · 162 citations
  3. 3Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers2009 · 213 citations
  4. 4Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon2005 · 118 citations
  5. 520 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate2007 · 52 citations