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The output conductance of GaAs MESFET's is shown to be a function of frequency and to have a well-defined temperature dependence. This behavior is in agreement with other reports of the behavior of GaAs ion-implanted MESFET's. The output conductance of buried-channel GaAs MESFET's is shown to be independent of frequency and temperature. This is an important improvement in the output characteristics with many implications for GaAs analog and digital circuits.
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Canfield et al. (1987) studied this question.
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