Silicon nitride (SiN x ) films on Si and poly(ethylene terephthalate) (PET) substrates were prepared at approximately 150°C by catalytic chemical vapor deposition (Cat-CVD), using a SiH 4 /NH 3 gas mixture. A water vapor transmission rate as low as 0.2 g/m 2 day and an O 2 gas transmission rate of 0.6 cm 3 /m 2 day were achieved for a stoichiometric Si 3 N 4 film of 77 nm thickness. Although these transmission rates depended on N/Si ratio, no optical absorption was observed under preferable deposition conditions.
No takes yet. Share an insight, caveat, or question.
Heya et al. (2004) studied this question.