High Pressure Crystallization of III-V Nitrides

Crystal growth from the solution under high N2 pressure (HNP method) results in high quality mm size crystals of GaN in 5 to 24 hour process. The crystallization of AIN is less efficient due to relatively lower solubility of nitrogen in the liquid Al. Possibility of InN growth is strongly limited since this compound is unstable at T > 600C even at 20 kbar. The growth of cm size high quality GaN crystals requires lower supersaturations and longer processes.