Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

Hot electron effects have been studied in multichannel AlGaN/GaN-based Superlattice Castellated Field Effect Transistors (SLCFET). Current-Voltage (I-V) and simulations could identify channel position-dependent impact ionization within the device fins. Electroluminescence (EL) emission is observed simultaneously with the impact ionization, whose spectral analysis shows the signature of hot electron scattering (Bremsstrahlung radiation) and not electron-hole recombination.