Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1–101) GaN facet

An InGaN/GaN MQW waveguide was fabricated on a (1–101) facet of MOVPE GaN on a 7 degree off oriented (001)Si substrate. Because of the low growth rate on the facet, we achieved uniform layers with less dislocation density and superior flatness. The optical gain of the stripe structure as a waveguide was analyzed at room temperature. It was found that the optical gain was as high as –20 cm–1 at a low excitation intensity of 4 kW/cm2 even for the photoluminescence peak wavelength of the quantum well. The high optical gain demonstrate the high optical quality of the MQW grown on the facet structure. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)