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The effect of grain size on electric properties has been investigated. Various (111) oriented PLZT films were prepared using the RF magnetron sputtering method on Pt/Ti/SiO2/Si substrates. Grain size and surface roughness were observed by AFM. The results showed that; 1) surface roughness depends on average grain size and 2) decreasing grain size decreases process degradation and fatigue. The grain boundary was thought to be responsible for process damage, such as reduction by hydrogen, at electrode interface tops. Electric field strength at grain boundaries also increased with increases in surface roughness.
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Ogata et al. (1999) studied this question.
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