Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films

The morphological evolution of AlN buffer layers grown on (111) silicon at high-temperature has been studied using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The structure and morphology of subsequently grown GaN films were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements. It was found that even though thicker AlN buffer layers are the poor single crystal with some defects like mis-oriented domains, stacking faults, they provide better templates for subsequent growth of GaN films with better crystalline and optical properties, compared to the GaN grown on a thin AlN buffer layer. To prevent the formation of SiNx layers at the interface, TMA was flowed for several seconds prior to the introduction of ammonia into the chamber. The AFM result showed that quasi 2-dimensional growth was quickly achieved for the AlN buffer layer with TMA pre-treatment. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)