RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)

We report the first microwave performance for AlGaN/GaN HEMT structures grown by molecular beam epitaxy on Si(110) high-resistivity substrates. Transistors were fabricated with gate lengths of 50, 75, and 100 nm, achieving short-circuit current cutoff frequencies as high as f T = 70 GHz and maximum oscillation frequencies of f MAX(U) = 93 GHz. Because complementary metal–oxide–semiconductor (CMOS) technology is compatible with (110) substrates, this demonstration establishes a foundation for the future integration of GaN devices into mainstream CMOS on a common Si(110) platform.