Radiation recombination in InAsSb/InAsSbP double heterostructures

Using photoluminescence (PL) and electroluminescence (EL) measurements and calculated energy band diagrams, we have studied the mechanisms of radiation recombination in InAsSb/InAsSbP double heterostructures forming the basis of lasers emitting at 3.6 mu m. Up to four PL lines are observed, which can be attributed to band-to-acceptor transitions in the active region, cladding layer and substrate and band-to band transitions in the substrate. In EL experiments emission from the active region and the InAs/InAsSbP interface was detected. The possibility of creating a tunable radiation source emitting at two wavelengths is demonstrated.