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Double heterostructure lasers based on the InAsSbP/InAsSb system have been prepared by liquid phase epitaxy. They operate at 78 K near 3.2 μm, with a threshold current density of 4.5 kA/cm2 in pulsed conditions. The characteristic temperature T0 is 30 K.
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Mani et al. (1988) studied this question.
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