Organometallic VPE Growth of InAs1-x-ySbxPy on InAs

InAs 1- x - y Sb x P y quaternary alloy lattice matched to InAs was successfully grown by organometallic vapor phase epitaxial growth. In a fairly wide composition range (0≦ x + y ≦0.7) the grown quaternary layer exhibited a mirror-smooth surface and a sharp X-ray diffraction spectrum. Full widths of half-maximum of X-ray rocking curve were 20–30''. The growth rate is limited by the mass transport of indium. The miscibility gap extent was found in the low arsenic composition region ( x + y >0.7). The band gap energy of the quaternary layer lattice matched to InAs was obtained from photoresponse measurements. The bowing parameter for the band gap energy of the InSb x P 1- x mixed crystal system is estimated to be 1.6±0.3 eV.