A low-frequency GaAs MESFET circuit model

GaAs MESFETs exhibit low-frequency anomalies which effect the performance of broadband systems. A four-terminal large-signal GaAs MESFET circuit model which predicts may of the low-frequency anomalies discovered in GaAS MESFETs is proposed. The four-terminal model accurately models 'drain lag', frequency dependence of the output resistance, and hysteresis. This model when implemented in a circuit analysis program will enable circuit designs to predict which circuit topologies will be more or less sensitive to the GaAs low-frequency anomalies.>