A vertically integrated InGaAs/InP PIN-JFET has been fabricated, in which separate layers are used for the FET channel and PIN intrinsic region. The maximum transconductance was 170 mS/mm, which is the highest reported figure for an integrated structure, and the photodiode quantum efficiency was 64% at −5 V and 1.53 μm wavelength, without antireflection-coating.
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Wake et al. (1986) studied this question.