Answers are grounded in this paper and cite their sources.
Relaxed, high-quality, compositionally step-graded InAsyP1−y layers with an As composition of y=0.4, corresponding to a lattice mismatch of ∼1.3% were grown on InP substrates using solid-source molecular-beam epitaxy. Each layer was found to be nearly fully relaxed observed by triple axis x-ray diffraction, and plan-view transmission electron microscopy revealed an average threading dislocations of 4×106 cm−2 within the InAs0.4P0.6 cap layer. Extremely ordered crosshatch morphology was observed with very low surface roughness (3.16 nm) compared to cation-based In0.7Al0.3As/InxAl1−xAs/InP graded buffers (10.53 nm) with similar mismatch and span of lattice constants on InP. The results show that InAsyP1−y graded buffers on InP are promising candidates as virtual substrates for infrared and high-speed metamorphic III–V devices.
No takes yet. Share an insight, caveat, or question.
Hudait et al. (2003) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: